Consistent Parameter Extraction for Advanced RF Devices

Pushing device operation frequencies towards sub-THz range causes serious challenges for conventional device characterization techniques.A good understanding of possible sources of errors and potential room for improvement at each step, are the key to increase the accuracy of device characterization.This application note presents a comparison of SOLT, NIST multiline TRL, and LRRM probe-tip calibration methods for accuracy of measured and extracted figure of merits (FoM) of advanced BiCMOS HBT.

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