GaN technology has proven capability for the realisation of Solid State Power Amplifiers (SSPAs). As the technology matures it is seeing increased adoption for applications requiring high linearity.
This White Paper describes the design of a PA for the 15GHz line of sight link band using Cree's 0.25μm GaN on SiC process. The performance of the initial design is optimised for IP3, the traditional microwave measure of linearity for amplifiers.
The performance of the amplifier when used with QAM 256 modulated signals is then also analysed. Spectral regrowth and Adjacent Channel Power Ratio (ACPR), distortion of the constellation and Error Vector Magnitude (EVM) are all evaluated.
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