Many different semiconductor technologies are currently being used for power amplifiers (PAs) that include a mix of Silicon and GaAs devices – Silicon Bipolar, Silicon MOSFET, GaAs MESFET, GaAs HBT and GaAs pHEMT. Avago uses enhancement-mode pHEMT (E-pHEMT) process for its PA design while most competitors have developed GaAs HBT technology. This paper shows why E-pHEMT technology can provide superior electrical and reliability performance for power amplifier design in wireless communications.
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