The Design and Test of a 600-Watt RF Laser Driver Using LDMOS Transistors
High Frequency Electronics, Brounley Engineering, Inc.
Richard W. Brounley
The use of LDMOS transistors in RF laser drivers presents major potential improvements over MOSFETS like the MRF151 and BLF177 that have been used successfully for many years. This article describes a two-transistor push-pull design at the commonly used frequency of 40.68 MHz, comparing its performance with a design using push-pull MOSFETS using the MRF151 or BLF177.
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