Gallium Nitride (GaN)

Gallium Nitride is emerging as a leading technology for high power, high frequency semiconductor applications. Gallium Nitride exhibits several characteristics that approach the performance of an ideal semiconductor substrate:

  • High breakdown voltage
  • High power density
  • High frequency operation
  • High Efficiency
  • Good thermal conductivity properties

Though there are several competing technologies that can match some of the capabilities of Gallium Nitride (GaN), GaN has several advantages over legacy RF technologies:

  1. High Breakdown Voltage
  2. Enhances Carrier Density and Saturation Velocity
  3. Enables Higher operating Junction Temperatures

Further, since most GaN is Grown on semi-insulating substrates, parasitic losses are diminished, compared with other technologies. the result? High power density and high power output over a wide bandwidth and improved performance for a variety of applications.


There has been much debate in the industry about the use of LDMOS versus GaN for high power applications. while LDMOS dose have a manufacturability advantage (LDMOS is fabricated on silicon wafers), the performance of LDMOS cannot match that of GaN. A comparison table is shown below.

GaN vs LDMOS Comparison

Processing Bespoke fab Standard CMOS
Wafer Diameter 3-6 Inches (SiC) 8 Inches (Si)
Max Frequency >12 GHz 3.8 GHz
Band gap 3.4 eV 1.1 eV
Max Temperature 250 °C 225 °C
Johnson FoM 324 1
Mask Count 13 22
Electron Velocity - Saturated 1.5 x 105m/s 1 x 105m/s
Electron Velocity - Peak 2.7 x 105m/s 1 x 105m/s
Breakdown Field 300 V/um 25 V/um
typ BVds 175 V 75 V

Featured Company


Country: South Korea

With annual GaN HPA production volumes in the hundreds of thousands, RFHIC is bringing GaN power amplifiers to market at prices that rival LDMOS and other legacy technologies. When you factor in the savings in supporting infrastructure, there is no downside. RFHIC is taking GaN to new heights, today. Read More...