Microchip Introduces Ka-band GaN MMIC Amplifier for 5G and SATCOM Applications

Microchip Introduces Ka-band GaN MMIC Amplifier for 5G and SATCOM Applications712370

Microchip Technology has introduced the GMICP2731-10 GaN MMIC power amplifier that is designed for use in commercial and defense satellite communications, 5G networks, and other aerospace and defense systems. Satellite communication systems use complex modulation schemes to achieve the ultra fast data rates required to deliver video and broadband data. To attain this, they must deliver high RF output power while simultaneously ensuring the signals retain their desired characteristics. This power amplifier from Microchip helps meet both of these requirements.

The GMICP2731-10 is fabricated using GaN-on-Silicon Carbide (SiC) technology. It delivers up to 10 W of saturated RF output power across the 3.5 GHz of bandwidth from 27.5 to 31 GHz. It has a power-added efficiency of 20%, 22 dB of small-signal gain and a return loss of 15 dB. A balanced architecture allows the GMICP2731-10 to be well matched to 50-ohms and includes integrated DC blocking capacitors at the output to simplify design integration.

“As communication systems employ complex modulation schemes such as 128-QAM and as the power of solid-state power amplifiers (SSPAs) trends ever upwards, RF power amplifier designers have the difficult challenge of finding higher power solutions while at the same time reducing weight and power consumption,” said Leon Gross, vice president of Microchip’s Discrete Products Group business unit. “GaN MMICs used in high power SSPAs can achieve greater than 30% lower power and weight as compared to their GaAs counterparts, which is a huge gain for satellite OEMs. This product delivers on the promise of GaN and enables the size, weight, power, and cost OEMs are searching for.”

Microchip’s GMICP2731-10 complements the company’s existing portfolio of GaAs MMIC RF power amplifiers, switches, low-noise amplifiers, and Wi-Fi front-end modules, as well as a GaN-on-SiC High Electron Mobility Transistor (HEMT) driver and final amplifier transistors for radar systems.

Development Tools

Microchip provides board design support to help with design-ins, as do the company’s distribution partners. The company also provides compact models for the GMICP2731-10, which allow customers to model the performance and expedite the design of the power amplifier in their systems more easily.

Publisher: everything RF