Sumitomo Electric Introduces High-Power GaN Devices for X-Band Radar Applications

Sumitomo Electric Introduces High-Power GaN Devices for X-Band Radar Applications

Sumitomo Electric Industries and its Group company Sumitomo Electric Device Innovations USA, a leading provider of advanced radiofrequency (RF), wireless and optical communications solutions, introduced Sumitomo Electric’s line of high-power gallium nitride (GaN) products for X-Band radar applications for Ground based and shipborne radars.

Next-generation X-Band radars face significant size, weight, power, and cost (SWAP-C) challenges. Among the challenges are the RF power amplifier designs used in these radar systems. Sumitomo Electric has developed a line of high-power GaN X-Band devices that enable RF solid-state power amplifiers to meet the SWAP-C challenges of these new radars while also improving reliability versus tube amplifiers. GaN provides very high power and bandwidth that improves performance and is a proven and reliable technology for radar applications.

Sumitomo Electric remains the leader in GaN and continues to lead in innovation and technology to help customers with lower costs and improved performance for next-generation radar systems.

Specifications of five new X-Band GaN devices are listed below


SGC8595-300B-RSGC0910-300B-RSGC1011-300B-RSGM6906VUSGM6901VU
Freq. (GHz)8.5-9.59.0-10.09.8 - 10.59.2-9.58.5-10.1
Power (W)

235W > 9.6 GHz

220 W > 10.3 GHz

43.7 W


21.4 W >10.1 GHz


Gain (dB)

7.7 dB > 9.17 GHz

7.7 dB > 9.6 GHz

7.4 dB > 10.3 GHz

21.4 dB23.3 dB
Efficiency38%38%37%37%38%
Package

Hermetic

Metal/ Ceramic

Flange Mount

Hermetic

Metal/ Ceramic

Flange Mount

Hermetic

Metal/ Ceramic

Flange Mount

Hermetically

Sealed SMT

Hermetically

Sealed SMT
Publisher: everything RF
Tags:-  Power AmplifierGaNRadar