Finwave's Innovative 3DGaN Technology Boosts Linearity to Drive Next-Gen Transistors and Amplifiers

Finwave's Innovative 3DGaN Technology Boosts Linearity to Drive Next-Gen Transistors and Amplifiers

Finwave, an innovator of semiconductor transistors with several decades of experience, has developed 3DGaN technology, a transformative approach that will potentially be the ultimate transistor technology for 5G. This patented technology is set to provide a significantly high linearity compared to conventional transistor technologies, making it suitable for upcoming 5G and 6G applications.

3DGaN technology has been designed to further linearize both power amplifiers (PAs) and low noise amplifiers (LNAs) at the device level. This linearization results in an increase in the linearity (gain vs. gate-source voltage characteristics) by more than 10 dB than conventional approaches. The result was achieved by both reducing “memory” effects from electron trapping and a novel device-level power combining approach.

The high intrinsic linearity of Finwave’s 3DGaN technology significantly improves PA efficiency at the backoff conditions required by complex modulation schemes. In addition, it allows for much simpler digital pre-distortion (DPD), or potentially eliminates the need for DPD altogether.

Finwave fabricated this technology in standard 8-inch CMOS fabrication facilities, with no special tools required.  They utilize advanced photolithography and CMP copper backends to capitalize on the capabilities of modern foundries. This is very different than the traditional compound semiconductor fabrication, which uses gold, liftoff, and E-Beam lithography to achieve short gate length devices.

The 3DGaN technology also suppresses the short channel effect and allows for a continuous scaling of GaN transistors - from 8" to 12” and from 0.13 um to deeply scaled transistors, bringing Moore's law to GaN.

Finwave has fabricated 3DGaN-based FinFET devices that are extremely compelling for 6G applications where over 400 GHz Ft and Fmax GaN FinFETs are readily achievable with an order of magnitude higher output power than other competing technologies. In addition to 5G/6G, Finwave’s 3DGaN technology can also significantly improve the efficiency and the operating frequency of power converters. The company is working with partners worldwide to bring these innovations to a wide range of applications – including everything from voltage regulators to electric vehicles.

Click here to learn more about Finwave's innovative 3DGaN Technology.

Publisher: everything RF
Tags:-   GaNTransistorsLinearityCMOS5G6G