RF Amplifier by MACOM (613 more products)

Note : Your request will be directed to MACOM.

The WSGPA01 from MACOM is a Discrete General-Purpose Amplifier (GPA) that operates from DC to 5 GHz. It provides a small signal gain of 16.3 dB with a drain efficiency better than 18.2% and P3dB of 10 W. The amplifier requires a 48 V supply voltage and draws 25 mA of current. It is based on a GaN on SiC High Electron Mobility Transistor (HEMT) technology. It is available in a Pb-free and RoHS-compliant plastic PG-DFN package that measures 3 x 4 mm. The amplifier is designed for use in communication infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals and is suitable for other applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    5 GHz GaN on SiC General-Purpose Amplifier for LTE/5G Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
    General Purpose
  • Standards Supported
    5G NR, 5G, 4G/LTE
  • Industry Application
  • Frequency
    DC to 5000 MHz
  • Gain
    14.8 to 16.3 dB
  • Grade
  • Class
    Class 1A
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    Up to 50 V
  • Current Consumption
    25 mA
  • Technology
    GaN on SiC HEMT
  • Package Type
    Surface Mount
  • Package
    DFN Plastic Package
  • Dimensions
    3 x 4 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
  • Note
    Drain Efficiency: 14 to 18.2 %, ACPR: -45.4 to -41 dBc

Technical Documents