APM-7516

Note : Your request will be directed to Marki Microwave.

APM-7516 Image

The APM-7516 from Marki Microwave is a low-phase noise amplifier that operates from 1 to 22 GHz. This amplifier provides a saturated output power of 23 dBm and a small signal gain of 12.5 dB with a noise figure of 5.1 dB. It can handle up to 20 dBm of input power and has a phase noise of -165 dBc/Hz at 10 kHz offset from the carrier frequency.

This amplifier uses GaAs HBT technology to provide low phase noise performance and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz.

The APM-7516 is available in a connectorized module that measures 1.12 x 0.59 x 0.41 inches with 2.92 mm connectors. It can be operated with a variety of bias conditions for both low power and high-power applications such as mobile test and measurement equipment, radar and satellite communication, 5G transceivers, and driver amplifier for S, H, and L-diode mixers.

Product Specifications

View similar products

Product Details

  • Part Number
    APM-7516
  • Manufacturer
    Marki Microwave
  • Description
    Low Phase Noise Driver Amplifier from 1 to 22 GHz

General Parameters

  • Type
    Driver Amplifier, Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Mobile Infrastructure
  • Standards Supported
    5G
  • Industry Application
    Radar, SATCOM, Test & Measurement
  • Frequency
    1 to 22 GHz
  • Small Signal Gain
    12.5 dB
  • Noise Figure
    5.1 dB
  • Output Power
    18 dBm
  • Output Power
    0.06 W
  • P1dB
    18 dBm
  • P1dB
    0.063 W
  • IP3
    33 dBm (OIP3) & 21 dBm (IIP3)
  • IP3
    2 W
  • Saturated Power
    23 dBm
  • Saturated Power
    0.1995 W
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Power Dissipation
    1.2 W
  • Impedance
    50 Ohms
  • Reverse Isolation
    34 dB
  • Output VSWR
    7.0:1
  • Input Return Loss
    18 dB
  • Output Return Loss
    20 dB
  • Phase Noise
    -164 dBc/Hz
  • Supply Voltage
    5 V
  • Current Consumption
    106 mA
  • Transistor Technology
    GaAs HBT
  • Technology
    GaAs
  • Dimensions
    1.12 x 0.59 x 0.41 in.
  • Connectors
    2.92 mm
  • Input Connector
    2.92 mm - Female
  • Output Connector
    2.92 mm - Male
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents