RIH25030-20

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The RIH25030-20 from RFHIC is a GaN on SiC Hybrid Power Amplifier that operates from 2400 to 2500 MHz. It delivers an output power of 30 W (44.77 dBm) with a gain of 15.5 dB and has a drain efficiency of 70%. The amplifier requires a drain voltage of 45 V and is input/output matched to 50 ohms. It is designed for CW, pulse, and linear operation and can be used for industrial heating & drying, scientific, medical, plasma generator, anti-drone systems, and jamming system applications. The amplifier is available in an SMD package that measures 13 x 17 x 2.9 mm with copper-clad lamination.

Product Specifications

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Product Details

  • Part Number
    RIH25030-20
  • Manufacturer
    RFHIC
  • Description
    30 W GaN Hybrid Power Amplifier from 2.4 to 2.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Jamming, Plasma Generator, MW Heating and Drying
  • Standards Supported
    ISM
  • Frequency
    2.4 to 2.5 GHz
  • Power Gain
    14 to 15.5 dB
  • Gain Flatness
    1 dB
  • Saturated Power
    40 to 45.2 dBm
  • Saturated Power
    30 to 33.11 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    10 dB
  • Supply Voltage
    45 V
  • Current Consumption
    50 mA
  • Transistor Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Dimensions
    13 x 17 x 2.9 mm
  • Weight
    2 g
  • Operating Temperature
    -30 to 125 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • RoHS
    Yes

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