RUM43020-10

RF Amplifier by RFHIC | Visit website (169 more products)

Note : Your request will be directed to RFHIC.

RUM43020-10 Image

The RUM43020-10 from RFHIC is a Power Amplifier that operates from 2 to 6 GHz. It delivers a saturated output power of 20 W with a gain of 35 dB and power added efficiency of 20%. It is designed using RFHIC’s GaN on SiC high-electron-mobility (HEMT) on aluminum sub-carrier technology to provide high breakdown voltage, efficiency, and lower thermal dissipation. This amplifier requires a DC input voltage of 28 V and draws 4 A of input current. It is available in a module that measures 6.69 x 2.52 x 0.84 inches and has SMA female connectors. The device is fully matched for easier system integration. It is ideal for general purpose applications like communication systems, wideband jammers, broadcast applications, and more.

Product Specifications

View similar products

Product Details

  • Part Number
    RUM43020-10
  • Manufacturer
    RFHIC
  • Description
    20 W GaN Power Amplifier from 2 to 6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    General Purpose, Driver amplifiers, Jamming
  • Frequency
    2 to 6 GHz
  • Power Gain
    35 dB
  • Grade
    Commercial, Military
  • Saturated Power
    43.01 dBm
  • Saturated Power
    20 W
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    5 to 6 dB
  • Supply Voltage
    28 V
  • Current Consumption
    4 A
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Dimensions
    170 x 64 x 21.5 mm
  • Connectors
    SMA - Female
  • DC Connectors
    D-sub, 9-Pin
  • Weight
    0.50 kg
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    -30 to 85 Degree C
  • Storage Temperature
    -45 to 105 Degree C
  • RoHS
    Yes

Technical Documents