Ultra Low-noise Highly Linear Integrated 1.5 to 2.7 GHz LNA
Jingshi Yao, Xiaopeng Sun, Barry Lin
This paper presents a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35μm GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2x2 sq. mm 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15 dB at a frequency range of 1.5-2.7 GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.
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