Beamforming IC by ED2 Corp

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F5288 Image

The F5288 from ED2 Corp is a System-in-Package (SiP) Phased Array Module (PAM) that operates at 28 GHz in the 5G NR n257 band. It consists of 2 x 2 radiating elements and incorporates the Renesas F5288 beamforming half-duplex transceiver. This 4-channel phased array module delivers high linear output power for 5G NR waveforms on the Tx side and features a low noise figure with low power consumption on the Rx side.

The Core Renesas IC provides highly flexible gain and phase control on each channel to achieve fine beam steering and gain compensation between radiating channels. This PAM has a 20 ns gain and phase settling time and a TX/RX mode switching time of 100 ns. It has 2048 on-chip programmable beam states and includes a standard SPI protocol that operates up to 65 MHz with fast beam switching and fast beam-state loading.

The F5288 requires a dedicated PA supply voltage which needs to be between +2.4V to +2.6V and +3.0V to +3.3V. It is available in a glass flip-chip BGA package that measures 10 x 10 x 0.5 mm, reducing PCB complexity and driving down the phased array system cost. This module is ideal for 5G single polarization phased-array antenna systems and beam steering applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    ED2 Corp
  • Description
    4 Channel System-in-Package Phased Array Module for 5G NR n257 Band

General Parameters

  • Application
    5G Single Polarization Phased-Array Antenna System, Beam Steering
  • Type
  • No of Channels
    4 Channels
  • Band
    Ka Band
  • Frequency
    26.5 to 29.5 GHz
  • Gain control
    4 Bit
  • RMS Gain Error
    0.2 dB
  • Tx/Rx Switching Time
    100 ns
  • Phase control
    4 Bit
  • RMS Phase Error
  • Voltage
    2.4 to 3.3 V
  • Operating Temperature
    -40°C to +95°C

Tx Parameters

  • Tx Gain Control
    30.5 dB

Rx Parameters

  • Rx Gain Control
    30.5 dB


  • Package Type
    Surface Mount
  • Package
    Flip Chip BGA
  • Size
    10 x 10 x 0.5 mm

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