MGFS52G38MB

The MGFS52G38MB from Mitsubishi Electric is a GaN Power Amplifier (PA) that operates from 3.3 to 3.8 GHz. It delivers a saturated output power of more than 125 W with a gain of over 28 dB and a power-added efficiency (PAE) of 40%. This PA can be used in 32T32R massive MIMO (mMIMO) antennas to reduce the manufacturing cost and power consumption of 5G mMIMO base stations. It utilizes Mitsubishi’s proprietary wideband Doherty circuit which mitigates bandwidth limitations caused by the output parasitic capacitance of GaN HEMTs. This amplifier has an epitaxial growth layer structure that achieves high efficiency and low distortion characteristics in 5G environments. It is available in a surface-mount package that measures 11.5 x 8.0 x 1.4 mm.