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MGFS52G38MB Image

The MGFS52G38MB from Mitsubishi Electric is a GaN Power Amplifier (PA) that operates from 3.3 to 3.8 GHz. It delivers a saturated output power of more than 125 W with a gain of over 28 dB and a power-added efficiency (PAE) of 40%. This PA can be used in 32T32R massive MIMO (mMIMO) antennas to reduce the manufacturing cost and power consumption of 5G mMIMO base stations. It utilizes Mitsubishi’s proprietary wideband Doherty circuit which mitigates bandwidth limitations caused by the output parasitic capacitance of GaN HEMTs. This amplifier has an epitaxial growth layer structure that achieves high efficiency and low distortion characteristics in 5G environments. It is available in a surface-mount package that measures 11.5 x 8.0 x 1.4 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    125 W GaN Power Amplifier from 3.3 to 3.8 GHz for 5G Massive MIMO Base Stations

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
    Base Station
  • Standards Supported
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.8 GHz
  • Gain
    28 dB
  • Grade
  • Saturated Power
    48 dBm
  • Saturated Power
    125 W
  • PAE
    40 %
  • Sub-Category
    GaN Amplifier
  • Transistor Technology
  • Package Type
    Surface Mount
  • Dimensions
    11.5×8.0×1.4 mm

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