The MGFS48G38MB from Mitsubishi Electric is a GaN Power Amplifier that operates from 3.4 to 3.8 GHz. It delivers a saturated output power of more than 63 W with a gain of over 28 dB and a power-added efficiency (PAE) of 43%. This power amplifier has an epitaxial growth layer structure that offers high efficiency and low distortion characteristics even when used in 5G environments. It utilizes Mitsubishi Electric’s wideband Doherty design that can help mitigate bandwidth limitations caused by the output parasitic capacitance of GaN HEMTs. This amplifier requires only a minimal number of components for 5G massive MIMO (mMIMO) base stations, thereby facilitating circuit design and lowering manufacturing costs. It is available in a surface-mount package that measures 11.5 x 8.0 x 1.4 mm and is ideal for 5G mMIMO base station applications.