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MGFS48G38MB Image

The MGFS48G38MB from Mitsubishi Electric is a GaN Power Amplifier that operates from 3.4 to 3.8 GHz. It delivers a saturated output power of more than 63 W with a gain of over 28 dB and a power-added efficiency (PAE) of 43%. This power amplifier has an epitaxial growth layer structure that offers high efficiency and low distortion characteristics even when used in 5G environments. It utilizes Mitsubishi Electric’s wideband Doherty design that can help mitigate bandwidth limitations caused by the output parasitic capacitance of GaN HEMTs. This amplifier requires only a minimal number of components for 5G massive MIMO (mMIMO) base stations, thereby facilitating circuit design and lowering manufacturing costs. It is available in a surface-mount package that measures 11.5 x 8.0 x 1.4 mm and is ideal for 5G mMIMO base station applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    63 W GaN Power Amplifier from 3.4 to 3.8 GHz for 5G mMIMO Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
    Base Station
  • Standards Supported
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.8 GHz
  • Gain
    28 dB
  • Grade
  • Saturated Power
    48 dBm
  • Saturated Power
    63 W
  • PAE
    43 %
  • Sub-Category
    GaN Amplifier
  • Transistor Technology
  • Package Type
    Surface Mount
  • Dimensions
    11.5 x 8.0 x 1.4 mm