Note : Your request will be directed to United Monolithic Semiconductors.

CHA8265-98F Image

The CHA8265-98F from United Monolithic Semiconductors is a Triple-Stage GaN MMIC Power Amplifier (PA) that operates from 27.5 to 31 GHz. It is designed for SATCOM and 5G applications and is manufactured using a GaN-on-SiC HEMT process with an internally matched 50-ohm output. This PA delivers a saturated output power of 25 W (44 dBm) with a linear gain of 25 dB and a power-added efficiency of 30%. It has an input return loss of 10 dB and an output return loss of 8 dB. 

The CHA8265-98F requires a 25 V drain bias voltage and has a quiescent drain current of 340 mA. It is available as a bare die measuring 3.6 × 3.6 mm and can operate over a temperature range from -40°C to +85°C.

Product Specifications

View similar products

Product Details

  • Part Number
    CHA8265-98F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    25 W Triple-Stage GaN Power Amplifier from 27.5 to 31 GHz

General Parameters

  • Configuration
  • Application
    5G, Point-to-Point, Radar, SATCOM
  • Frequency
    27.5 to 31 GHz
  • Gain
    24 to 27 dB
  • Gain Flatness
    ±1 dB
  • Output Power
    25 W
  • P1dB
    44 dBm
  • IM3
    -30 dBc Typical
  • IP3
    50 to 55 dBm
  • Linear Power
    43 to 44 dBm
  • Saturated Power
    45 dBm
  • Input Power
    18 to 22 dBm
  • Power Dissipation
    Up to 40 W
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • VSWR
    <2:1
  • Input Return Loss
    10 to 15 dB
  • Harmonics
    -20 to -15 dBc
  • Tx Current
    Up to 2.6 A
  • Tx Gain
    25 dB
  • Supply Voltage
    20 to 25 VAC
  • Current Consumption
    340 mA to 2.6 A
  • Transistor Technology
    GaN HEMT
  • Technology
    GaN-on-SiC
  • Package Type
  • Dimensions
    3.6 × 3.6 × 0.07 mm
  • Cooling Options
    Heatsink Required
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Certifications
    RoHS, REACH

Technical Documents