Design of a Dual-Band Wireless LAN SiGe Bipolar Amplifier
Winfried Bakalski, Krzysztof Kitlinski, Günter Donig, Boris Kapfelsperger, Christian Kuehn, Carsten Ahrens, Wilfried Österreicher and Wolfgang Auchter, Robert Weigel, Arpad L. Scholtz.
This article describes an integrated dual-band multi-mode wireless LAN radio fre-quency power amplifier (Infineon PMB 8825) for 2.45 GHz and 5.25 GHz. The device has been real-ized in a 42 GHz-fT, 0.35-μm SiGe-Bipolar high volume technology. The chip features two sin-gle-ended 3-stage power amplifiers for each frequency band and a control section that includes band select, standby and power con-trol functions. The 2.45 GHz section achieves an output P1dB of 28 dBm with a PAE of 40% and a saturated output power of 29 dBm. The 5.25 GHz section achieves an output P1dB of 23.8 dBm, and a saturated output power of 25.9 dBm at 3.3 V supply voltage. Its PAE at the P1dB is 24%. The small signal gain is 31 dB at 2.45 GHz and 26 dB at 5.25 GHz.
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