Design of a Dual-Band Wireless LAN SiGe Bipolar Amplifier
High Frequency Electronics
- Author:
Winfried Bakalski, Krzysztof Kitlinski, Günter Donig, Boris Kapfelsperger, Christian Kuehn, Carsten Ahrens, Wilfried Österreicher and Wolfgang Auchter, Robert Weigel, Arpad L. Scholtz.
This article describes an integrated dual-band multi-mode wireless LAN radio fre-quency power amplifier (Infineon PMB 8825) for 2.45 GHz and 5.25 GHz. The device has been real-ized in a 42 GHz-fT, 0.35-μm SiGe-Bipolar high volume technology. The chip features two sin-gle-ended 3-stage power amplifiers for each frequency band and a control section that includes band select, standby and power con-trol functions. The 2.45 GHz section achieves an output P1dB of 28 dBm with a PAE of 40% and a saturated output power of 29 dBm. The 5.25 GHz section achieves an output P1dB of 23.8 dBm, and a saturated output power of 25.9 dBm at 3.3 V supply voltage. Its PAE at the P1dB is 24%. The small signal gain is 31 dB at 2.45 GHz and 26 dB at 5.25 GHz.
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