Novel Passivation Ledge Monitor in an InGaP HBT Process
Cristian Cismaru and Peter J. Zampardi
The HBT ledge thickness and quality is vital for device performance and reliability. In this work we report on a measurement technique and test structure for monitoring the emitter passivation ledge based on the use of TaN as a barrier between the InGaP ledge surface and the top metal contact. The technique is suitable for the manufacturing environment.
By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.