Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes
In today’s complex circuits used in wireless applications, multiple turn-on voltage diodes are desired for added design flexibility. In this work we report a novel Schottky diode with a lowered barrier height and turn-on voltage of 0.42 V in InGaP/GaAs HBT/BiFET processes based on the use of TaN as the anode material.
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