Ampleon has launched the B10H1822N60D, a flagship product in its novel High-Voltage LDMOS Macro Driver platform, enabling uncompromised drive of high-power GaN-SiC transistors in macro base stations. This fully integrated 2-stage LDMOS Doherty MMIC is designed to deliver high gain, strong linearity and simplified RF design for 4G and 5G macrocell base station driver applications. Covering the 1800 MHz to 2200 MHz frequency range, the device integrates key amplifier stages and matching networks into a compact and thermally enhanced 7 mm × 7 mm LGA package, enabling a new level of efficiency and integration for modern wireless infrastructure.
A 48 V nominal supply voltage introduces the potential to simplify the overall power supply architecture in GaN-SiC-based RF macro chains, while fully supporting multi-mode back-off operation.
As macrocell base station designs continue to evolve, RF engineers are increasingly challenged to achieve high linearity and efficiency while minimizing complexity, footprint and development time. Traditional multi-stage driver solutions often require multiple discrete components, extensive matching and careful bias optimization, increasing both design effort and system variability. The B10H1822N60D addresses these challenges by integrating a complete 2-stage Doherty architecture with 50 Ω input and output matching.
At typical operating conditions, the device delivers 33 dBm average output power with gain approaching 30 dB and drain efficiency exceeding 20 % under LTE signal conditions, providing a strong combination of amplification and efficiency for driver-stage applications. This high gain reduces the need for additional driver stages, simplifying system architecture and improving overall efficiency in the RF chain.
The B10H1822N60D is engineered to support modern high-PAR signals and wideband operation, demonstrating excellent linearity performance and suitability for LTE and 5G modulation schemes. Its capability for independent control of carrier and peaking bias enables further optimization of Doherty performance, allowing designers to fine-tune efficiency and linearity across operating conditions. The device also delivers consistent gain and stable operation across the full frequency band, supporting flexible deployment in multi-band base station platforms.
Beyond performance, the B10H1822N60D is designed for robust real-world operation. It can withstand load mismatch conditions up to a 10:1 VSWR under defined operating conditions, ensuring reliable behavior in dynamic RF environments where impedance variations are unavoidable. Integrated ESD protection and strong thermal characteristics further enhance reliability, making the device well suited for high-power and high-density macrocell deployments.
Leveraging the integration strengths of LDMOS, the B10H1822N60D combines all key Doherty driver functions into a single compact, thermally enhanced 7 mm × 7 mm LGA housing - simplifying RF design, improving predictability, and minimizing tuning effort. The B10H1822N60D is now available through Ampleon’s global distribution network.
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