everything RF visited the Tagore Tech booth at IMS 2026, where Pasi Tikka, Vice President of Strategy and Business Development, presented the company’s latest portfolio of high-power gallium nitride (GaN) RF switches designed for tactical communications, data links, and RF systems. The showcase featured GaN-based switch solutions covering power levels from 5 W up to 200 W average power, with peak power handling reaching up to 630 W, targeting high-performance RF applications.
A key highlight of the presentation was the introduction of the TS8223K RF switch, designed for data links, tactical radios, and MANET radio applications. The switch supports 10 W average power and 50 W peak power, with 0.4 dB insertion loss up to 8.5 GHz, 30 dB isolation at 6 GHz, and a 120 ns switching time, enabling fast and efficient switching in compact systems.
In addition to the TS8223K, Pasi presented a 0.5-ohm binary-weighted tuning switch, TS63560D, designed for tunable low-pass filters and antenna tuning. These switches are aimed at applications such as tactical communication systems and drone data links, offering precise RF tuning capabilities. The company also showcased its SP6T and SP8T RF switch variants, along with a high-power 200 W RF switch capable of handling up to 350 W peak power and operating up to 1.5 GHz.
Pasi explained how Tagore’s GaN RF switch technology enables high-power switching without the power consumption associated with traditional PIN diode-based solutions. The company noted that while PIN diode implementations often require multiple components, its GaN-based switches deliver equivalent functionality in a single integrated device, reducing system complexity. Tagore’s switches are fully tested components, unlike discrete PIN diode implementations that are typically validated only after integration.
Click here to learn more about Tagore tech and its switch technologies.
