The devices are also electrically rugged to handle the often “out-of-spec” operating conditions they can experience.
TriQuint Semiconductor, Inc. has released two new packaged 1W and 2W gallium arsenide (GaAs) RF driver amplifiers that provide best-in-class linearity, low power consumption, and advanced protection features for CDMA, WCDMA and LTE base station or similar applications.
The TQP7M9105 and TQP7M9106 are the latest members of TriQuint’s growing third-generation family of 5V linear driver amplifiers. In addition to their superior performance in cellular base transceiver stations (BTS), they are equally well suited for RF designs in remote radio head (RRH), small cell BTS and defense amplifier configurations.
The new TQP7M9105 delivers 1W (+30dBm) of RF output power at 1dB gain compression (P1dB) and 19.4dB of gain, and an Output Third-Order Intercept Point (OIP3) of 49dBm, matching the highest linearity in its class, while consuming only 220mA from its single +5V supply. The TQP7M9106 delivers 2W (+33dBm) P1dB RF output power with 20.8dB of gain, and 50dBm OIP3, which is greater than competing devices, yet draws only 455mA from its +5V supply. Both devices integrate on-chip circuits that allow them to achieve linearity typical of amplifiers operating in Class A mode, yet with Class AB efficiency.
Technical Details:
TQP7M9105
50 to 1500 MHz RF driver amplifier, 1W (+30dBm) P1dB RF output power +49dBm OIP3, 19dB gain, on-chip RF input overdrive, DC overvoltage, and ESD protection. Operates on a +5V supply at 220mA; offered in a 3-pin SOT-89 package.
TQP7M9106
50 to 1500 MHz RF driver amplifier, 2W (+33dBm) P1dB RF output power +50dBm OIP3, 20dB gain, on-chip RF input overdrive, DC overvoltage, and ESD protection. Operates on a +5V supply at 455mA; offered in a 24-pin 4x4mm QFN package.
