MWE Japan 2012 Line-Up of Richardson RFPD

Richardson RFPD, Inc. is participating in MWE Japan 2012, to be held at Exhibition Hall-D, Pacifico Yokohama, Japan from November 28-30, 2012 at its booth #B604.

Richardson RFPD will present:

• ANADIGICS Small Cell Power Amplifiers: Designed for WCDMA, HSDPA and LTE in Bands 1, 2, 4, 7, and 10, offering up to +27 dBm linear WCDMA (64 DPCH) power and up to 18% PAE in linear region (64 DPCH).
• Analog Devices A/D Converters: Dual, 14-Bit, 80 MSPS/125 MSPS ADCs from ADI, featuring on-chip sample-and-hold circuit designed for low cost, low power, small size, ease of use.
• Freescale Semiconductor Airfast Power Transistor: 2.1 GHz 350w LDMOS with 15 dB gain, 56 dBm P3dB and drain efficiency of 48% @ 8dB OBO (48 dBm).
• Freescale Semiconductor Extremely Rugged RF LDMOS: MOSFETs combine enhanced ruggedness of 65:1 VSWR and wideband operation over a broad, 1 MHz to 2 GHz frequency range.
• GORE® Phaseflex® 0G Cable/RF Test Assemblies: 18 GHz assemblies for high-throughput production test applications feature flexible, robust strain-relief boots and easy grip, quick-turn connectors, along with exceptional phase and amplitude stability.
• MA-COM Tech GaN Power Transistors: Operating up to 3.5 GHz, these pulsed power devices are designed for L-Band and S-Band applications up to 250W and are available as discrete transistors or high power pallets.
• MA-COM Tech High Power Switches: SPDT, high linearity, PIN diode Tx/Rx switches that are well-suited for high power LTE and TD-SCDMA infrastructure, WiMAX, and military radio applications
• Microsemi GaN: 700W Peak Power L-Band GaN HEMT, operating up to 1030 MHz and offering 21 dB gain and 75% drain efficiency under Mode-S ELM pulse format.
• Peregrine Semiconductor DuNE™ DTCs: 5-bit 32-state Digitally Tunable Capacitors operating from 100 - 3000 MHz and featuring 3-wire, SPI compatible interface.
• TriQuint Semiconductor LNAs: New wideband LNAs covering up to 4.0 GHz, with noise figure as low as 0.40 dB at 1.9 GHz, 20 dB associated gain and +20 dBm P1dB at 5V/65mA. Ideal for wireless infrastructure, repeaters, RRH, and TMA.
• TriQuint Semiconductor GaN RF Power Products: Including transistors with >55W output power and covering up to 6GHz, switches up to 18 GHz with power handling as high as 40W with high isolation, and a 2.5-6 GHz power amplifier with +45.5 dBm Psat and 26 dB gain.
• TRU High Power RF Cable Assemblies: Offering kW power handling up to 10 GHz and up to 6X power handling vs. standard RF assemblies. Available with a wide range of connectors and cable types.

For more information please visit http://www.richardsonrfpd.com.