Note : Your request will be directed to MILLIBEAM.

H4E1N1 Image

The H4E1N1 from Millibeam is a Multi-Stage GaN Power Amplifier (PA) MMIC that operates from 4.4 to 5.5 GHz. It is designed for 5G-NR macro base stations and small cells operating in the n79, n46, and Wi-Fi 6E bands, fixed wireless access, and C-band infrastructure. This PA delivers a saturated output power of 20 W (~ 43 dBm) with a small signal gain of 32 dB and a power-added efficiency (PAE) of more than 40%. It integrates a Doherty combining network on-chip, thereby eliminating the need to use external splitters, combiners, and matching networks and simplifying the design. 

The H4E1N1’s input and output ports are internally matched to 50 Ohms, providing a standard RF layout with no need for additional tuning. This power amplifier requires a 30 V DC supply. It is available in a 24-lead QFN package measuring 4 x 5 mm.

Product Specifications

View similar products

Product Details

  • Part Number
    H4E1N1
  • Manufacturer
    MILLIBEAM
  • Description
    5G Multi-Stage GaN Power Amplifier MMIC from 4.4 to 5.5 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Base Station, Small Cell
  • Standards Supported
    5G NR View all
  • Industry Application
    Cellular View all
  • Frequency
    4.4 to 5.5 GHz
  • Gain
    32 dB ±1.5 dB
  • Small Signal Gain
    30 dB
  • Output Power
    3 W (Avg)
  • Saturated Power
    33 dBm
  • Saturated Power
    20 W
  • PAE
    15 to 40 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    GaN Amplifier View all
  • Technology
    GaN
  • Package Type
    Surface Mount View all
  • Package
    QFN 24-lead
  • Dimensions
    4 x 5 mm