The BAP70-04W from NXP Semiconductors is a RF PIN Diode with Forward Voltage 0.9 to 1.1 V, Forward Current 100 mA, Reverse Voltage 50 V, Reverse Current 0.1 uA, Power Dissipation 260 mW. Tags: Surface Mount. More details for BAP70-04W can be seen below.

Product Specifications

Product Details

  • Part Number
    BAP70-04W
  • Manufacturer
    NXP Semiconductors
  • Description
    Silicon PIN diode with 100 mA of forward current

General Parameters

  • Application
    Attenuator, Switch
  • Configuration
    Common Cathode
  • Forward Voltage
    0.9 to 1.1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    50 V
  • Reverse Current
    0.1 uA
  • Power Dissipation
    260 mW
  • Thermal Resistance
    230 K/W
  • Forward Resistance
    1.4 to 100 Ohms
  • Series Inductance
    1.4 nH
  • Capacitance
    250 to 600 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    1.25 Us
  • No. of Diodes
    2
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents