Note : Your request will be directed to pSemi, A Murata Company.

The PE42359 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 MHz through 3 GHz. It has high ESD protection (2 kV HBM) which is essential for automotive applications, giving the product a longer life span as warranty repairs can be costly for manufacturers. The switch has low insertion loss of 0.35 dB @ 1GHz, 0.5 dB @ 2 GHz; and high isolation of 30 dB @ 1000 MHz, resulting in improved overall RF performance. Using a nominal +3V power supply voltage, a typical input 1 dB compression point of +33.5 dBm can be achieved. With low power consumption of only 9 microamperes, and a minimum power supply voltage of just 1.8V, the PE42359 enables longer battery life in portable applications such as RKE devices.

Product Specifications

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Product Details

  • Part Number
    PE42359
  • Manufacturer
    pSemi, A Murata Company
  • Description
    SPDT UltraCMOS RF switch Designed from 10 MHz to 3 GHz

General Parameters

  • Type
    Solid State Switches View all
  • Configuration
  • Termination
    Reflective View all
  • Frequency
    10 MHz to 3 GHz
  • Insertion Loss
    0.35 (1 GHz) to 0.5 dB(2 GHz)
  • Isolation
    30 dB
  • P1dB
    27 to 33.5 dBm(Input)
  • P1dB
    0.5 to 2.23 W
  • Power
    27 dBm
  • Power
    0.5 W
  • IIP3
    54 to 55 dBm
  • IIP3 (W)
    251.8 to 316.23 W
  • Supply Voltage
    1.8 to 3.3 V
  • Supply Current
    9 to 20 µA
  • Control Voltage
    0.54 to 2.31 V
  • Switching Speed
    3.6 µs
  • Control
    CMOS
  • Impedance
    50 Ohm View all
  • Package Type
    Surface Mount View all
  • Dimension
    1.25 x 2 mm
  • Return Loss
    9 to 25 dB
  • Process
    Silicon-on-Insulator (SOI), UltraCMOS
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Rise Time : 1 nSec, Offering : GaAs

Technical Documents