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TDSW0602T

RF Switch by Teledyne e2v HiRel Electronics

Note : Your request will be directed to Teledyne e2v HiRel Electronics.

The TDSW0602T from Teledyne e2v HiRel is a silicon-on-insulator (SOI) reflective SPDT switch that operates from 9 kHz to 60 GHz. It has an insertion loss of less than 3.8 dB and a port to port isolation of over 36 dB. The switch has an IIP3 of 48 dBm and a maximum switching time of 12 ns. This switch has a control voltage of -3 to 3 volts and blocking capacitors are not required if DC voltage is not present on the RF ports.

The SOI process has space-flight heritage and is TID radiation tolerant to 50 krad and immune to SEL (Single Event Latchup), making it a viable choice for satellites and other high-altitude, high reliability applications. This product leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver unprecedented performance in the K and Ka microwave and millimeter-wave bands for customers.

The TDSW0602T is manufactured using an UltraCMOS process. It is ideal for applications that require extended temperature support in the range of –55°C to +125°C and Harsh industrial & Wafer MIL-PRF-38534 Class K testing.

Product Specifications

    Product Details

    • Part Number :
      TDSW0602T
    • Manufacturer :
      Teledyne e2v HiRel Electronics
    • Description :
      Radiation Tolerant SPDT Switch from 9 kHz to 60 GHz

    General Parameters

    • Type :
      Solid State
    • Configuration :
      SPDT
    • Termination :
      Reflective
    • Application Industry :
      Commercial, SATCOM
    • Frequency :
      9 kHz to 60 GHz
    • Insertion Loss :
      1.3 to 2.7 dB
    • Isolation :
      36 to 41 dB
    • P1dB :
      23 to 33 dBm
    • P1dB :
      0.19 to 0.99 W
    • Power :
      10 to 27 dBm (CW), 10 to 30 dBm(Pulsed)
    • Power :
      0.01 to 0.5 W(CW), 0.01 to 1 W (Pulsed)
    • Supply Voltage :
      +/-3.3 V
    • Control Voltage :
      -2.7 to 3.3 V
    • Switching Speed :
      8 ns
    • Impedance :
      50 Ohms
    • Package Type :
      Die
    • Technology :
      CMOS, HaRP, SOI
    • Operating Temperature :
      -55 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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