Eutectic Die-Attach of GaN and GaAs MMICs
The latest GaN and GaAs circuit chips (die) are providing higher power levels than previous solid-state technologies. These new generation devices require incredible precision and consistency throughout the die-attach and assembly process to ensure that the thermal flux from these devices is efficiently conducted to the heat spreaders and away from the transistor-gate regions. There are many metal-quality and thickness challenges to overcome when developing a repeatable eutectic die-attach process, including avoiding contamination, the quality of the pickup collets, and efficient but accurate screening procedures. This technical brief details the key factors in determining if a eutectic die-attach process is sophisticated enough to serve the mission-critical applications of today’s aerospace, military, Satcom, and telecommunications applications.
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