Qorvo Advances Defense Phased Array Radar Performance with 150 W GaN Power Amplifier

Qorvo Advances Defense Phased Array Radar Performance with 150 W GaN Power Amplifier

Qorvo has introduced a GaN power amplifier (QPA3070) that delivers a 50 percent increase in power for improved range, performance and multi-target tracking in S-band (2-4 GHz) phased array radars.

The Qorvo QPA3070 leapfrogs existing industry offerings, providing 150 watts of power for the 2.9-3.5 GHz frequency range with a power gain of 28 dB and power added efficiency (PAE) of 58 percent. These achievements have been made possible by using Qorvo’s ultra-reliable and highly efficient gallium nitride (GaN) on silicon carbide (GaN-on-SiC) process technology, which offers superior efficiency, power density, and affordability.

The PA delivers these features in a small and cost-effective surface-mount package. It enables engineers to design higher power radar solutions with significant size, weight, power, and cost (SWAP-C) improvements – and bring them to market faster. The QPA3070 PA is available now to qualified customers.

Key Specifications of the QPA3070 Power Amplifier:

Frequency Range2.9 to 3.5 GHz
PSAT52 dBm
Power Gain28 dB
Package Size7 x 7 x 0.85 mm

Qorvo offers the industry's largest, most innovative GaN-on-SiC portfolio to help customers realize superior efficiency and operational bandwidth. The company's GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability, and process maturity. Qorvo is a leading supplier of RF products and compound semiconductor foundry services to defense primes and other global defense and aerospace customers. Qorvo is the only supplier to achieve a Manufacturing Readiness Level 10 (MRL 10) rating from the U.S. Department of Defense.

Click here to know more about the QPA3070 GaN Power Amplifier.

Publisher: everything RF


  • Country: United States
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