United Monolithic Semiconductors Unveils New 0.1-µm GaN Technology Process

United Monolithic Semiconductors Unveils New 0.1-µm GaN Technology Process

United Monolithic Semiconductors (UMS) has announced that its new GH10-10 0.1-µm GaN technology is now fully qualified and operational in production mode, empowering customers with high performance, fast time-to-market, and a greater competitive advantage.

Recognized as a European supplier leader for innovative GaAs and GaN processes, UMS serves leading industries including defense, aerospace, telecommunications, automotive, and industrial markets. Driving innovation forward, UMS sets new standards in performance with GH10-10 low-noise RF switches and High-Power Amplifier (HPA) MMIC solutions, delivering unmatched efficiency.

“GH10-10 represents a major leap forward in our technology roadmap, enabling high-frequency operation beyond V band with a good device robustness. By integrating GH10-10 technology into the market, our GaN platform reaches new levels of performance and capability, empowering more advanced and competitive solutions to push the boundaries of RF and mm-wave performance,” said Valeria Di Giacomo-Brunel, Head of UMS Product Solutions & Foundry Services.

Key highlights of GH10-10


Click here to learn more about GH10-10 from UMS.

Publisher: everything RF