MACOM has released the MAPC-A4032, a high-efficiency, 500 W GaN-on-SiC power amplifier designed for civil and military S-band pulsed radar applications operating between 2.75 and 3.75 GHz. The device delivers 12 dB gain, 55% drain efficiency, and is optimized for pulsed operation, offering rugged reliability in demanding radar environments.
The MAPC-A4032 is a 65 V, 500 W high-power GaN amplifier engineered to support the performance and durability requirements of next-generation radar platforms. MACOM notes that the amplifier’s GaN-on-SiC technology enables high power density, stable operation, and long device lifetime under pulsed conditions.
According to the specifications, the amplifier provides RF output power of 500 W (54 dBm), drain efficiency of 55%, and is housed in a hermetic, flange-mount metal-ceramic package. The device features a thermally enhanced construction, low thermal resistance, and is designed for applications where efficiency, ruggedness, and high peak power capability are essential.
Key features include:
- GaN-on-SiC technology for high reliability
- Hermetic, metal-ceramic package with bolt-down flange
- Input pre-matched for simple integration
- Optimized for pulsed S-band radar systems
- Internally matched impedance of 50 ohms
- ROHS compliant
The MAPC-A4032 is suited for civil aviation radar, military air-defense radar, weather radar, and other high-performance S-band systems. Its combination of high efficiency and robust thermal design positions it as a strong candidate for radar OEMs seeking power-dense, long-lifetime solutions.
Click here to learn more about the MAPC-A4032 from MACOM.
