WIN Semiconductors Corp, a leader in advanced semiconductor solutions and the world’s largest pure-play compound semiconductor foundry, announces the successful qualification of NP12-0B for 40 V operation. This 0.12 μm gate-length GaN-on-SiC technology integrates multiple transistor improvements, providing high ruggedness when operated in deep-saturation/high-compression pulsed and CW conditions. These enhancements proved so effective that NP12-0B has now satisfied qualification testing for reliable 40 V operation of the power amplifier, T/R switch, and single-chip front-end MMICs.
NP12-0B is a rugged, versatile platform that provides a unique set of capabilities of high output power, low insertion loss switching, and low noise figure, expanding the performance envelope of this platform. Enabling high-performance amplifiers, output transistors tuned for maximum power at 18 GHz and 40 V provide 7.9 W/mm Psat, 13.3 dB gain, and 42% PAE. When tuned for maximum PAE, the same power cell exhibits 6.1 W/mm Psat, with 14.6 dB gain and 55% PAE at 18 GHz. When used in a switch configuration, common-gate devices show insertion loss below 0.4 dB, power handling greater than 42 dBm, with sub-20 nS switching speed using a 40 V control voltage. Adding to its power capabilities, NP12-0B also provides excellent noise figure with a typical Fmin of 1 dB with a 10 dB associated gain at 20 GHz. The comprehensive set of performance capabilities and reliable 40V operation greatly expands the trade-space for high-performance front-end products used in next-generation radio access networks, satellite communications, and radar systems.
The NP12-0B platform has been in production since 2024 and is available with the Enhanced Moisture Ruggedness option, which provides excellent humidity resistance for use in plastic packaging. The updated 40 V Process Design Kit (PDK) supporting PA, switch and LNA designs will be available for customer download in Q2 2026.
To learn more about NP12-0B and WIN’s entire GaN, GaAs, and InP technology portfolio, visit booth# 23048 at the 2026 IEEE MTT-S International Microwave Symposium being held in Boston, MA, June 9-11.
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