MPI Demonstrates Advanced RF and High-Power Device Characterization at IMS 2026

MPI Demonstrates Advanced RF and High-Power Device Characterization at IMS 2026

MPI Corporation, a provider of advanced semiconductor test and measurement solutions is showcasing an integrated pulsed measurement environment at IMS 2026 in Boston this week. The demonstration, hosted at Booth #14046, brings together technologies from AMCAD Engineering, Focus Microwaves, MPI Corporation, and Dassault Systèmes SIMULIA to highlight advanced characterization techniques for RF and high-power devices.

At the center of the demonstration is MPI Corporation’s TS200 probe station equipped with ITUN technology, integrated with the AMCAD Engineering 3200 Pulse IV System and Focus Microwaves’ 5 GHz to 65 GHz multi-harmonic tuners. The setup also includes the AM3221 power probe, which supports transistor drain bias operation up to 250 V and 30 A. Together, the system supports pulsed measurement functions such as Pulsed S-Parameters, Pulsed IV, and Pulsed Load-Pull characterization.

The platform is used to examine device behavior under realistic operating conditions and supports the development of nonlinear device models for RF and mmWave applications. By combining pulsed characterization techniques in a single workflow, the demonstration shows how measurement approaches can be used in the design and optimization of power devices and high-frequency systems.

Visitors to IMS 2026 can view the live measurement workflow and interact with engineers from the participating companies. The demonstration also indicates the use of integrated measurement setups for RF and microwave device characterization.

Click here to learn more about MPI TS200.

Publisher: everything RF
Tags:-   Test & Measurement