everything RF @ IMS 2026: UMS Showcases GaN HEMT Platform and SATCOM High Power Amplifier

everything RF @ IMS 2026: UMS Showcases GaN HEMT Platform and SATCOM High Power Amplifier

everything RF visited the United Monolithic Semiconductors (UMS) booth at IMS 2026 and had a conversation with their CTO, Vincent Lebre. At booth #17075, the company showcased its latest developments in RF and microwave technologies, with a focus on high-power solutions for satellite communications and future semiconductor innovation.

Vincent talked about their high-power amplifier designed for SATCOM terminal applications. The amplifier has an innovative packaging approach to improving thermal management. Supporting the main amplifier, he also highlighted that a range of driver amplifiers can be combined with the high-power device to address larger antenna systems. These driver solutions enable scalable system configurations, allowing engineers to build more complex RF architectures depending on application needs. The combined approach is particularly suited for satellite communication systems where multiple stages of amplification are required. 

The New GH10-10 GaN Platform

Vincent also touched upon the company’s ongoing progress in semiconductor technology through its GH10-10 GaN technology platform. Introduced last year, the platform has already been evaluated by early customers and received encouraging feedback. GH10 is expected to play a key role in future RF and microwave designs, offering performance improvements and supporting the development of next-generation applications.

The GH10-10 is a 0.1 µm GaN HEMT technology designed for high-frequency and high-power RF applications. It typically operates at 15 V bias with ~150 mA/mm current density, delivering power density up to ~3 W/mm and power-added efficiency of over 50% under optimized conditions. The technology supports operation from microwave frequencies into the millimeter-wave and V-band range, while maintaining good gain and efficiency. It is suitable for both high-power (amplifiers) and low-noise designs, and is optimized for thermal performance, reliability, and accurate device modeling, making it useful for satcom, radar, and advanced RF systems.



Click here to learn more about GH10-10.

Publisher: everything RF