ADL8142

RF Amplifier by Analog Devices (336 more products)

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The ADL8142 from Analog Devices is a GaAs pHEMT MMIC Low Noise Amplifier that operates from 23 to 31 GHz. It delivers a gain of 29 dB with a noise figure of less than 1.8 dB and has a saturated output power of 10 dBm. The LNA has a power added efficiency of more than 18%. It requires a DC supply of 2 V and consumes 25 mA of current. The amplifier is available in an RoHS-compliant LFCSP package that measures 2 x 2 mm with AC-coupled inputs and outputs that are internally matched to 50 ohms. It is ideal for use in satellite communications, telecommunications and civilian radar applications.

Product Specifications

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Product Details

  • Part Number
    ADL8142
  • Manufacturer
    Analog Devices
  • Description
    GaAs pHEMT MMIC Low Noise Amplifier from 23 to 31 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Telecom Infrastructure
  • Industry Application
    Cellular, SATCOM, Radar
  • Frequency
    23 to 31 GHz
  • Gain
    27 to 29 dB
  • Noise Figure
    1.6 to 1.8 dB
  • P1dB
    7.5 to 10 dBm
  • P1dB
    0.0056 to 0.01 W
  • Gain Stability
    0.073 to 0.037 dB/°C
  • IP2
    25 to 35 dBm
  • Grade
    Commercial, Space
  • IP2
    0.316 to 3.16 W
  • IP3
    29 dBm
  • IP3
    0.794 W
  • Saturated Power
    11 dBm
  • Saturated Power
    0.0125 W
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Power Dissipation
    0.54 W
  • PAE
    18 to 21 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10 %
  • Input Return Loss
    10.5 to 13 dB
  • Output Return Loss
    15 to 16 dB
  • Supply Voltage
    1.5 to 3.5 V
  • Current Consumption
    25 mA
  • Quiscent Current
    23 mA
  • Transistor Technology
    GaAs HEMT
  • Package Type
    Surface Mount
  • Package
    8-lead LFCSP
  • Dimensions
    2 x 2 x 0.85 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Pulsed RF Input Power: 22 dBm

Technical Documents