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The ATEK581N5 from ATEK MIDAS is a RF Amplifier with Frequency 8 to 12 GHz, Gain 31.5 to 32.3 dB, Small Signal Gain 31.5 to 32.3 dB, Output Power 42.3 to 43 dBm, Output Power 16.98 to 19.95 W. Tags: Surface Mount, Power Amplifier. More details for ATEK581N5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ATEK581N5
  • Manufacturer
    ATEK MIDAS
  • Description
    GaN MMIC Power Amplifier from 8 to 12 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Marine, Electronic Countermeasure (ECM), Unmanned Aircraft Systems(UAS)
  • Standards Supported
    X Band View all
  • Industry Application
    Radar, Test & Measurement, Electronic Warfare
  • Frequency
    8 to 12 GHz
  • Gain
    31.5 to 32.3 dB
  • Small Signal Gain
    31.5 to 32.3 dB
  • Output Power
    42.3 to 43 dBm
  • Output Power
    16.98 to 19.95 W
  • Input Power
    26 dBm
  • Input Power
    0.39 W
  • PAE
    42 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
    CW/Pulsed View all
  • Sub-Category
    Pulsed Amplifer, GaN Amplifier
  • Return Loss
    -17 to -12 dB
  • Input Return Loss
    -17 dB
  • Output Return Loss
    -12 dB
  • Supply Voltage
    34 V
  • Quiscent Current
    200 mA
  • Package Type
    Surface Mount View all
  • Package
    SMD
  • Dimensions
    5 x 5 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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