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CMX90A705 Image

The CMX90A705 from CML Microcircuits is a Two-Stage GaN Power Amplifier that operates from 27.5 to 31 GHz. It delivers a saturated output power of 5.5 W (~37.4 dBm) with a small signal gain of 16.5 dB and PAE of 22%. This Ka-Band amplifier is fabricated using a state-of-the-art 0.15 µm gate length GaN-on-SiC process. It requires a DC supply of 22 to 28 V and consumes 860 mA of current.

 The CMX90A705 incorporates on-chip 50 Ohms nominal matching with integrated DC blocking capacitors at the I/O ports. This power amplifier is available in an AQFN-12 package that measures 4 x 4 mm. It can be used as both driver stage and final stage power amplifier in commercial satellite communication terminals, residential satellite internet, telecommunication, and commercial VSAT applications.

Product Specifications

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Product Details

  • Part Number
    CMX90A705
  • Manufacturer
    CML Microcircuits
  • Description
    5.5 W Two-stage GaN Power Amplifier from 27.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
  • Industry Application
    SATCOM View all
  • Frequency
    27.5 to 31 GHz
  • Gain
    14 to 17 dB
  • Small Signal Gain
    14 to 17 dB
  • IP3
    42 dBm
  • Saturated Power
    5.5 W
  • PAE
    22 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Reverse Isolation
    43 dB
  • Sub-Category
    GaN Amplifier View all
  • Input Return Loss
    10 dB
  • Output Return Loss
    9 dB
  • Supply Voltage
    22 to 28 V
  • Current Consumption
    182 mA
  • Transistor Technology
    GaN-on-SiC
  • Package Type
    Surface Mount View all
  • Package
    AQFN-12
  • Dimensions
    4 x 4 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • Tags
    SµRF Range View all

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