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IGNP0450M850

RF Amplifier by Integra Technologies, Inc.

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The IGNP0450M850 from Integra is P-band Power Amplifier that operates from 400 to 450 MHz. It delivers an output power of over 850 W with a gain of 20.5 dB and has a drain efficiency of up to 78 %. The amplifier is based on GaN-on-SiC HEMT technology and has been designed to suit the unique needs of P-Band radar systems. It has a pulse droop of up to 0.2 dB, a pulse width of 300 µs, and has a duty cycle of 10 %. The amplifier requires a DC supply of 50 V.

Product Specifications

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Product Details

  • Part Number
    IGNP0450M850
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    850 W P-band Power Amplifier from 400 to 450 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Radar
  • Frequency
    400 to 450 MHz
  • Gain
    19.8 to 21.8 dB
  • Output Power
    60.61 dBm
  • Output Power
    1150 W
  • Grade
    Commercial, Military, Space
  • Input Power
    9 W
  • Input Power
    39.54 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulse
  • Duty Cycle
    10 %
  • VSWR
    2.0:1, 3.0:1
  • Pulse Droop
    -0.4 to 0.2 dB
  • Supply Voltage
    50 V
  • Current Consumption
    150 mA
  • Technology
    GaN on SiC HEMT
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Drain Efficiency :- 70 to 85 %

Technical Documents

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