KU PA 200270-10 A

Note : Your request will be directed to Kuhne Electronic.

Based on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power. The amplifier is temperature compensated and, despite its high gain (47dB), features a very low gain ripple of typically +/- 0.5dB across the full bandwidth.
The high efficiency in combination with an extended operating temperature range of -20 ... + 80°C allows the use of the amplifier module even under suboptimal cooling conditions. An overtemperature shutdown at +80°C (with automatic restart) protects the module from overheating.
The RF output tolerates arbitrary mismatch without causing instability or damage.
In addition to the standard version with + 28V operating voltage (version A), the amplifier module is also available with wide-range supply voltage input (version B, +10 ... + 50V operating voltage).
The module provides low-impedance monitoring outputs for measurement and monitoring of forward and backward power as well as operating temperature. Power supply, control and monitoring signals are provided via a robust I/O interface (9-pin Sub-D connector) with protection against reverse polarity, overvoltage and EMI.

Product Specifications

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Product Details

  • Part Number
    KU PA 200270-10 A
  • Manufacturer
    Kuhne Electronic
  • Description
    Power Amplifier from 2 to 2.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Radar, Test & Measurement, EMC, Jamming
  • Small Signal Gain
    47.5 dB
  • Gain Flatness
    ±0.75 dB
  • Noise Figure
    1.5 dB
  • Output Power
    40 dBm
  • Output Power
    10 W
  • IM3
    30 dBc
  • Input Power
    30 dBm
  • Input Power
    1 W
  • Impedance
    50 Ohms
  • Pulsed/CW
  • Return Loss
    13 dB
  • Input Return Loss
    13 dB
  • Harmonics
    40 dB
  • Supply Voltage
    28 V
  • Current Consumption
    1000 mA
  • Quiscent Current
    150 mA
  • Transistor Technology
    GaN HEMT
  • Dimensions
    85 X 85 X 40 mm
  • Connectors
    SMA, SMA - Female
  • Input Connector
    SMA - Female
  • Output Connector
    SMA - Female
  • Weight
    500 g
  • Operating Temperature
    -20 to 80 Degee C

Technical Documents