WSDC2640-V1

RF Amplifier by MACOM

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WSDC2640-V1 Image

The WSDC2640-V1 from MACOM is a RF Amplifier with Frequency 2.496 to 2.69 GHz, Gain 16.5 to 18.8 dB, Power Gain 12 to 17 dB, Small Signal Gain 18.8 dB, Output Power 39.5 to 48.5 dBm. Tags: Surface Mount, Power Amplifier. More details for WSDC2640-V1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WSDC2640-V1
  • Manufacturer
    MACOM
  • Description
    Thermally Enhanced GaN-on-SiC Amplifier from 2.496 to 2.69 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Base Station, Broadband
  • Standards Supported
    WCDMA, 4G/LTE
  • Industry Application
    Cellular View all
  • Frequency
    2.496 to 2.69 GHz
  • Gain
    16.5 to 18.8 dB
  • Power Gain
    12 to 17 dB
  • Small Signal Gain
    18.8 dB
  • Output Power
    39.5 to 48.5 dBm
  • Output Power
    8.91 to 70.79 W
  • Saturated Power
    48.5 dBm
  • Saturated Power
    70.79 W
  • PAE
    45 to 64%
  • Impedance
    50 Ohms View all
  • Pulsed/CW
    CW/Pulsed View all
  • Pulse Width
    20 µs
  • Duty Cycle
    0.1
  • VSWR
    1.40:1
  • Sub-Category
    GaN Amplifier, Doherty Amplifier
  • Return Loss
    -20 to -7 dB
  • Input Return Loss
    -20 to -7 dB
  • Supply Voltage
    48 V
  • Current Consumption
    40 mA (IDQ)
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount View all
  • Package
    DFN
  • Dimensions
    6.5 x 7 mm
  • Operating Temperature
    -40 to 225 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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