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LTA-M1109-D+

RF Amplifier by Mini Circuits

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The LTA-M1109-D+ from Mini Circuits is a Distributed Amplifier that operates from DC to 50 GHz. It provides a gain of more than 13 dB and has a P1dB of 20 dBm. The amplifier provides an isolation of 36 dB and has a noise figure of less than 11.8 dB. It is fabricated using PHEMT process that delivers exceptional broadband RF performance and is well matched to 50 ohms. This distributed amplifier operates over a DC supply of 5 V and can handle an RF input power of +17 dBm. It is available as a die that measures 1970 x 1300 μm and is ideal for 5G networks, commercial and military radios, and instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    LTA-M1109-D+
  • Manufacturer
    Mini Circuits
  • Description
    20 dBm Distributed Amplifier Die from DC to 50 GHz

General Parameters

  • Type
    Gain Block
  • Configuration
    Die
  • Application
    Instrumentation
  • Standards Supported
    5G
  • Industry Application
    Military, Broadcast
  • Frequency
    DC to 50 GHz
  • Gain
    13 to 17.4 dB
  • Gain Flatness
    ±2.2 dB
  • Noise Figure
    3.1 to 11.8 dB
  • P1dB
    17 to 20.7 dBm
  • P1dB
    0.050 to 0.11 W
  • Grade
    Commercial, Military
  • IP3
    20.8 to 32 dBm
  • Impedance
    50 Ohms
  • Sub-Category
    Distributed Amplifier
  • Input Return Loss
    12 to 25 dB
  • Output Return Loss
    12 to 27 dB
  • Supply Voltage
    5 V
  • Current Consumption
    160 mA
  • Transistor Technology
    pHEMT
  • Operating Temperature
    -40 to 85 Degree C
  • RoHS
    Yes

Technical Documents

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