NW-BA-LS-10-S01

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The NW-BA-LS-10-S01 from NuWaves is a Bidirectional Amplifier that operates from 1 to 2.5 GHz. The Tx side, delivers a saturated output power of 20 W with a gain of 38 dB. On the Rx side, it provides a gain of 14 dB with a noise figure of 2 dB and has a P1dB of 16.2 dBm. The amplifier is based on the latest gallium nitride (GaN) technology and offers 38% power efficiency at most frequencies. It has a Tx/Rx mode switching time of less than 2 µs with auto-sensing or a manual Tx/Rx line. The amplifier requires a DC supply of 28 V and draws less than 3.5 A of current. It is ideal for extending the communication range of half-duplex L- or S-band transceivers running constant-envelope or near-constant-envelope waveforms.

The Xtender LS10S01 also supports adjacent radio frequency bands, such as the 900 MHz Industrial, Scientific, and Medical (ISM) band, at lower peak power levels. It has over-voltage and reverse-voltage protection. The amplifier is available in a module that measures 3.00 x 2.00 x 0.65 inches with SMA-female connectors and is suitable for use in unmanned aircraft systems (UAS) group 2 and group 3, unmanned ground vehicles (UGV), RF communication systems, and software-defined radios.

Product Specifications

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Product Details

  • Part Number
    NW-BA-LS-10-S01
  • Manufacturer
    NuWaves Engineering
  • Description
    20 W GaN Bidirectional Amplifier from 1 to 2.5 GHz

General Parameters

  • Type
    Bi-Directional Amplifier
  • Configuration
    Module with Connector
  • Application
    Unmanned Aircraft Systems (UAS), Unmanned Ground Vehicles (UGV), Software Defined Radios
  • Frequency
    1 to 2.5 GHz
  • Gain Flatness
    1.9 dB (Rx), 8 dB (Tx)
  • Noise Figure
    2 dB (Rx)
  • Grade
    Commercial, Military
  • Linear Power
    40 dBm
  • Linear Power
    10 W
  • Saturated Power
    43.01 dBm
  • Saturated Power
    10 to 20 W
  • Pulsed/CW
    CW
  • Rx Current
    115 mA
  • Rx Gain
    12 to 14 dB
  • Sub-Category
    GaN Amplifier
  • Tx Current
    2.3 to 3.5 A
  • Tx Gain
    38 dB
  • Switching Time
    0.95 to 2 us
  • Supply Voltage
    11 to 32 V
  • Current Consumption
    2.3 to 3.5 A
  • Transistor Technology
    GaN
  • Dimensions
    3.0 x 2.0 x 0.65 in
  • Connectors
    SMA, SMA - Female
  • Weight
    5.8 oz
  • Cooling Options
    Adequate Heatsink Required
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 85 Degree C

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