NW-BA-VU-4-GX01 Image

NW-BA-VU-4-GX01

RF Amplifier by NuWaves Engineering | Visit website (63 more products)

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The NW-BA-VU-4-GX01 from NuWaves Engineering is a solid state bi-directional amplifier that operates from 225 to 512 MHz. This L-Band/S-Band Bidirectional amplifier provides 10 watts of RF transmit power and a transmit gain of 35 dB. In receive mode, it provides a low noise figure of 3.5 dB and incorporates a low noise amplifier that provides 15 dB of gain. The amplifier has manual transmit / receive (T/R) mode selection switch which has a switching time of 2 µS.

This compact and light weight bi-directional amplifier is ideal for extending the communication range of half duplex L or S-band transceivers with constant-envelope waveforms. It is available in a module that measures 2.34 x 2.34 x 0.61 inches with SMA female connectors and is ideal for broadband RF telemetry, software defined radios and communication systems.

This amplifier has been developed using gallium nitride (GaN) technology, it offers greater than 30% power efficiency at most frequencies and its compact size makes it ideal for integration into space constrained platforms.

Product Specifications

    Product Details

    • Part Number :
      NW-BA-VU-4-GX01
    • Manufacturer :
      NuWaves Engineering
    • Description :
      10 W Bi-directional Amplifier from 225 to 512 MHz

    General Parameters

    • Type :
      Bi-Directional Amplifier, Power Amplifier
    • Configuration :
      Module with Connector
    • Standards Supported :
      VHF Band, UHF Band
    • Industry Application :
      Aerospace & Defense, SATCOM, Wireless Infrastructure
    • Frequency :
      225 to 512 MHz
    • Gain :
      15 dB(Rx)
    • Small Signal Gain :
      31 dB (Tx)
    • Gain Flatness :
      ±0.5 dB
    • Noise Figure :
      2.5 dB
    • P1dB :
      17 dBm (Rx)
    • P1dB :
      0.05 W (Rx)
    • Linear Power :
      36 dBm (Tx)
    • Linear Power :
      4 W (Tx)
    • Saturated Power :
      10 W (Tx)
    • Power Requirement :
      5 dBm
    • Impedance :
      50 Ohms
    • Rx Current :
      100 to 150 mA
    • Input VSWR :
      2.00:1
    • Output VSWR :
      1.00:1
    • Harmonics :
      -13 dBc
    • Spurious :
      -50 dBc
    • Tx Current :
      1.1 to 2 A
    • Switching Time :
      2 to 4 us
    • Supply Voltage :
      10 to 32 V
    • Quiscent Current :
      950 mA
    • Technology :
      GaN
    • Dimensions :
      2.34 x 2.34 x 0.61 Inch
    • Connectors :
      SMA, SMA - Female
    • Input Connector :
      SMA - Female
    • Output Connector :
      SMA - Female
    • DC Connectors :
      Micro-D, 15-pin Socket
    • Weight :
      1.92 oz
    • Cooling Options :
      External Heatsink (Optional)
    • Operating Temperature :
      -40 to 85 Degree C
    • Storage Temperature :
      -55 to 85 Degree C

    Technical Documents

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