The A5M34TG140-TC from NXP Semiconductors is a Doherty Power Amplifier Module that operates from 3300 to 3670 MHz. It is based on NXP's new top-side cooling technology that helps radio designers create thinner, lighter 5G radio units while reducing design and manufacturing complexities. This 8 W module series is designed for massive MIMO radios covering 3.3 GHz to 3.8 GHz — typically 32T32R (200 W) or 64T64R (320 W) radios. The amplifier modules combine NXP’s in-house LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance.

This power amplifier module series is a 2−stage module that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. This amplifier is designed for low-complexity digital linearization systems and has a thermal path that is separated from the electrical/solder connection path for enhanced thermal dissipation. It also has reduced memory effects for improved linearized error vector magnitude.

The A5M34TG140-TC requires a DC supply of 5 V and consumes less than 11.3 mA of current. It is available in a module that measures 14 x 10 mm and is ideal for massive MIMO systems, outdoor small cells, low-power remote radio heads, TDD LTE, and 5G system applications.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    Top-Side Cooled RF Power Amplifiers for 5G Infrastructure from 3300 to 3670 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
    DAS, Radio, Small Cell
  • Standards Supported
    4G/LTE, 5G, TDD
  • Industry Application
    Wireless Infrastructure
  • Frequency
    3300 to 3670 MHz
  • Gain
    30.7 to 31.2 dB
  • Grade
  • IP3
    48 to 49.1 dBm
  • IP3
    63 to 81.2 W
  • Input Power
    28 dBm
  • Input Power
    0.63 W
  • PAE
    42 to 48 %
  • Impedance
    50 Ohms
  • Pulsed/CW
  • Sub-Category
    Doherty Amplifier
  • Supply Voltage
    4.75 to 5.25 V (Vdd1) / 38 to 55 V (Vdd2)
  • Transistor Technology
    LDMOS and GaN on SiC
  • Dimensions
    14 x 10 mm
  • Operating Temperature
    125 Degree C (Max)
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACPR:-31.4 to -30.7 dBc

Technical Documents