The MMA20312BV from NXP Semiconductors is a RF Amplifier with Frequency 1.8 to 2.2 GHz, Power Gain 27.2 dB, Small Signal Gain 25.5 to 28.8 dB, Noise Figure 3.3 dB, P1dB 30.5 dBm. Tags: Surface Mount, Driver Amplifier, Power Amplifier. More details for MMA20312BV can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MMA20312BV
    • Manufacturer :
      NXP Semiconductors
    • Description :
      InGaP HBT Linear Amplifier, 1800 -2200 MHz, 27.2 dB, 30.5 dBm

    General Parameters

    • Type :
      Driver Amplifier, Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Standards Supported :
      CDMA, TD-SCDMA, PCS, UMTS, LTE
    • Frequency :
      1.8 to 2.2 GHz
    • Power Gain :
      27.2 dB
    • Small Signal Gain :
      25.5 to 28.8 dB
    • Noise Figure :
      3.3 dB
    • P1dB :
      30.5 dBm
    • P1dB :
      1.12 W
    • Input Power :
      14 dBm
    • Input Power :
      0.03 W
    • Class :
      Class AB
    • Impedance :
      50 Ohms
    • Pulsed/CW :
      CW
    • Sub-Category :
      Linear Amplifier
    • Input Return Loss :
      -17.6 to -9.7 dB
    • Output Return Loss :
      -20.3 to -13.7 dB
    • Supply Voltage :
      3.3 to 5.0 V
    • Current Consumption :
      Supply current: 550 mA
    • Transistor Technology :
      InGaP, HBT
    • Technology :
      InGaP, HBT
    • Package Type :
      Surface Mount
    • Package :
      QFN 3 x 3
    • Storage Temperature :
      -65 to 150 Degree C
    • RoHS :
      Yes

    Technical Documents

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