The MMG20271H9 from NXP Semiconductors is a RF Amplifier with Frequency 1.5 to 2.7 GHz, Power Gain 16 dB, Small Signal Gain 14.3 to 18 dB, Noise Figure 1.5 dB, P1dB 27.5 dBm. Tags: Surface Mount, Low Noise Amplifier, Power Amplifier. More details for MMG20271H9 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MMG20271H9
    • Manufacturer :
      NXP Semiconductors
    • Description :
      E pHEMT GPA/LNA, 1500 2700 MHz, 16 dB, 27.5 dBm

    General Parameters

    • Type :
      Low Noise Amplifier, Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Application :
      Base Station
    • Standards Supported :
      PCS, LTE, TD-SCDMA, WCDMA
    • Industry Application :
      Cellular
    • Frequency :
      1.5 to 2.7 GHz
    • Power Gain :
      16 dB
    • Small Signal Gain :
      14.3 to 18 dB
    • Noise Figure :
      1.5 dB
    • P1dB :
      27.5 dBm
    • P1dB :
      0.56 W
    • IP3 :
      Input: 23 to 29.9 dBm, 43.1 dBm
    • IP3 :
      Input: 23 to 29.9 dBm, 43.1 dBm
    • Input Power :
      25 dBm
    • Input Power :
      0.32 W
    • Class :
      Class A
    • Impedance :
      50 Ohms
    • Pulsed/CW :
      CW
    • Sub-Category :
      Linear Amplifier
    • Input Return Loss :
      -18.5 to -11 dB
    • Output Return Loss :
      -35 to -24 dB
    • Supply Voltage :
      5 V
    • Current Consumption :
      Supply current: 215 mA
    • Transistor Technology :
      E-pHEMT
    • Technology :
      E-pHEMT
    • Package Type :
      Surface Mount
    • Package :
      SOT-89
    • Storage Temperature :
      -65 to 150 Degree C
    • RoHS :
      Yes

    Technical Documents

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