The MML09212H from NXP Semiconductors is a RF Amplifier with Frequency 400 MHz to 1.4 GHz, Gain 37.5 dB, Small Signal Gain 35 to 40 dB pk-pk, Noise Figure 0.52 to 0.74 dB, P1dB 22.5 to 22.8 dBm. Tags: Low Noise Amplifier. More details for MML09212H can be seen below.

Product Specifications

  • Part Number
    MML09212H
  • Manufacturer
    NXP Semiconductors
  • Description
    Enhancement Mode Phemt Technology (E--pHEMT) Low Noise Amplifier
  • Type
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    ISM Band, GSM, LTE, WCDMA
  • Industry Application
    Cellular, Industrial, Aerospace & Defense, Medical
  • Frequency
    400 MHz to 1.4 GHz
  • Gain
    37.5 dB
  • Small Signal Gain
    35 to 40 dB pk-pk
  • Noise Figure
    0.52 to 0.74 dB
  • P1dB
    22.5 to 22.8 dBm
  • P1dB
    0.178 to 0.191 W
  • IP3
    -3 to 38 dBm
  • IP3
    0 to 6.31 W
  • Output Power CW
    22.8 dBm
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Pulsed/CW
    CW
  • Reverse Isolation
    -58 dB
  • Sub-Category
    Linear Amplifier
  • Return Loss
    -24 to -17 dB
  • Output Return Loss
    -15 to -13.5 dB
  • Supply Voltage
    5 V
  • Current Consumption
    300 mA
  • Transistor Technology
    E-pHEMT
  • Technology
    GaAs, SiGe
  • Package Type
    Surface Mount
  • Package
    QFN 3 x 3
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    yes
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