TheMMZ25333B is a multi-stage power amplifier based InGaP GaAs HBT technology. It operates from 1500 MHz to 2700 MHz and delivers 2 W of power with a gain of over 40 dB. The amplifier supports any cellular standard operating in its frequency including GSM, 3G, 4G and LTE. It is available in a compact industry-standard 4 mm QFN package. It is suitable for driver and pre-driver applications in macro base stations, and final stage applications in small cells. The high performance and integration of the PA can help customers reduce part counts, streamline supply chains, and optimize costs.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    2 W High Gain Power Amplifier for Cellular Infrastructure, InGaP GaAs HBT
  • Type
  • Configuration
    IC / MMIC
  • Application
    Base Stations, Cellular
  • Standards Supported
  • Frequency
    1.5 to 2.7 GHz
  • Gain
    More than 40 dB
  • Power Gain
    43.7 dB
  • P1dB
    33 dBm
  • P1dB
    1.99 W
  • PAE
  • Supply Voltage
    5 V
  • Quiscent Current
    265 ma
  • Package Type
    Surface Mount
  • Package
    QFN 4 x 4 Plastic
  • RoHS
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