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REMC0M1GW80

RF Amplifier by RF-Lambda
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The REMC0M1GW80 from RF-Lambda is a RF Amplifier with Frequency 0.02 to 1 GHz, Small Signal Gain 50 to 55 dB, Gain Flatness ±2 to ±3 dB, P1dB 50 dBm, P1dB 100 W. Tags: Benchtop / Rackmount, Power Amplifier. More details for REMC0M1GW80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    REMC0M1GW80
  • Manufacturer
    RF-Lambda
  • Description
    Wideband EMC Benchtop Power Amplifier from 0.02 to 1 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    System View all
  • Application
    Test Equipment, Base Station, EMC, Wireless Communication, Research and Development
  • Standards Supported
    5G, Radio
  • Industry Application
    Wireless Infrastructure, Military, Aerospace & Defense, Radar, Cellular, Broadcast
  • Frequency
    0.02 to 1 GHz
  • Small Signal Gain
    50 to 55 dB
  • Gain Flatness
    ±2 to ±3 dB
  • P1dB
    50 dBm
  • P1dB
    100 W
  • Grade
    Military, Space
  • Saturated Power
    48.5 to 51 dBm
  • Saturated Power
    70.79 to 125.89 W
  • PAE
    0.1
  • Impedance
    50 Ohms View all
  • Pulsed/CW
    CW View all
  • Input VSWR
    1.50:1, 2.00:1
  • Sub-Category
    GaN Amplifier, SSPA
  • AC Voltage
    90 to 264 VAC
  • Current Consumption
    3 A
  • Technology
    GaN
  • Package Type
    Benchtop / Rackmount View all
  • Input Connector
    N Type - Female
  • Output Connector
    N Type - Female
  • Interface
    USB, TTL, LNA
  • Weight
    45.5 lbs
  • Operating Temperature
    0 to 50 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • Certifications
    MIL-STD-202G, MIL-STD-883
  • Note
    LDMOS

Technical Documents
View details on the manufacturer's website
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